Markku Sopanen

Peer-reviewed scientific articles

Journal article-refereed, Original research

Atomic layer etching of gallium nitride (0001)

Kauppinen, Christoffer; Khan, Sabbir Ahmed; Sundqvist, Jonas; Suyatin, Dmitry B.; Suihkonen, Sami; Kauppinen, Esko I.; Sopanen, Markku

2017 in JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A (AVS Science and Technology Society)

ISSN: 0734-2101

Grass-like Alumina with Low Refractive Index for Scalable, Broadband, Omnidirectional Antireflection Coatings on Glass Using Atomic Layer Deposition

Kauppinen, Christoffer; Isakov, Kirill; Sopanen, Markku

2017 in ACS APPLIED MATERIALS AND INTERFACES (AMER CHEMICAL SOC)

ISSN: 1944-8244

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Garg, Manjari; Kumar, Ashutosh; S., Nagarajan; Sopanen, M.; Singh, R.

2016 in AIP ADVANCES (AMER INST PHYSICS)

ISSN: 2158-3226

A technique for large-area position-controlled growth of GaAs nanowire arrays

Kauppinen, Christoffer; Haggren, Tuomas; Kravchenko, Aleksandr; Jiang, Hua; Huhtio, Teppo; Kauppinen, Esko; Dhaka, Veer; Suihkonen, Sami; Kaivola, Matti; Lipsanen, Harri; Sopanen, Markku

2016 in NANOTECHNOLOGY (IOP PUBLISHING LTD)

ISSN: 0957-4484

Non-destructive method for strain imaging in an individual GaN nanorod by confocal Raman technique

Nagarajan, S.; Sopanen, M.

2016 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Fluorescence-enhancing plasmonic silver nanostructures using azopolymer lithography

Pale, Ville; Kauppinen, Christoffer; Selin, Jorma; Sopanen, Markku; Tittonen, Ilkka

2016 in RSC ADVANCES (ROYAL SOC CHEMISTRY)

ISSN: 2046-2069

Two-Photon Absorption in GaAs1-x-yPyNx Intermediate-Band Solar Cells

Jussila, Henri; Kivisaari, Pyry; Lemettinen, Jori; Tanaka, T.; Sopanen, Markku

2015 in PHYSICAL REVIEW APPLIED (AMER PHYSICAL SOC)

ISSN: 2331-7019

Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode

Kumar, Ashutosh; Subramaniyam, Nagarajan; Sopanen, M.; Kumar, V.; Singh, R.

2015 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

ISSN: 0268-1242

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

Jussila, H.; Yu, K.M.; Kujala, J.; Tuomisto, F.; Subramaniyam, Nagarajan; Lemettinen, J.; Huhtio, T.; Tuomi, T.O.; Lipsanen, H.; Sopanen, M.

2014 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Mattila, Päivi; Bosund, Markus; Jussila, Henri; Aierken, Abuduwayiti; Riikonen, Juha; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku

2014 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Diffusion injected multi-quantum well light-emitting diode structure

Riuttanen, Lauri; Kivisaari, Pyry; Nykänen, Henri; Svensk, Olli; Suihkonen, Sami; Oksanen, Jani; Tulkki, Jukka; Sopanen, Markku

2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation

Riuttanen, Lauri; Nykänen, Henri; Suihkonen, Sami; Sopanen, Markku

2014 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Stress distribution in GaN nanopillars using confocal Raman mapping technique

Subramaniyam, Nagarajan; Svensk, Olli; Lehtola, Lauri; Lipsanen, Harri; Sopanen, Markku

2014 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Composition determination of quaternary GaAsPN layers from single X-ray diffraction measurement of quasi-forbidden (002) reflection

Tilli, Juha-Matti; Jussila, Henri; Yu, Kin Man; Huhtio, Teppo; Sopanen, Markku

2014 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Optical propertiesofelectronbeamand gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures

Aierken, Abuduwayiti; Guo, Qi; Huhtio, Teppo; Sopanen, Markku; He, Chengfa; Li, Yudong; Wen, Ling; Ren, Diyuan

2013 in RADIATION PHYSICS AND CHEMISTRY (Elsevier Limited)

ISSN: 0969-806X

Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

Homeyer, Estelle; Mattila, Päivi; Oksanen, Jani; Sadi, Toufik; Nykänen, Henri; Suihkonen, Sami; Symonds, Clementine; Tulkki, Jukka; Tuomisto, Filip; Sopanen, Markku; Bellessa, Joel

2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography

Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Suihkonen, Sami; Lankinen, Aapo; Huhtio, Teppo; Paulmann, Carsten; Lipsanen, Harri; Tuomi, Turkka; Sopanen, Markku

2013 in THIN SOLID FILMS (Elsevier Science)

ISSN: 0040-6090

Migration kinetics of ion-implanted beryllium in ZnO and GaN

Koskelo, Otso; Köster, Ulli; Tuomisto, Filip; Helariutta, Kerttuli; Sopanen, Markku; Suihkonen, Sami; Svensk, Olli; Räisänen, Jyrki

2013 in PHYSICA SCRIPTA (IOP Publishing Ltd.)

ISSN: 0031-8949

Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by MetalOrganic Vapor Phase Epitaxy in H2 and N2 Ambients

Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip

2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Band-edge luminescence degradation by low energy electron beam irradiation in GaN grown by metal-organic vapor phase epitaxy in H2 and N 2 ambients

Nykänen, Henri; Suihkonen, Sami; Svensk, Olli; Sopanen, Markku; Tuomisto, Filip

2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Thermally assisted recovery of low energy electron beam irradiation induced optical degradation of GaN

Nykänen, Henri; Suihkonen, Sami; Sopanen, Markku; Tuomisto, Filip

2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Photocatalytic degradation of dyes by CdS microspheres under near UV and blue LED radiation

Repo, Eveliina; Rengaraj, Selvaraj; Pulkka, Susanna; Castangnoli, Emmanuelle; Suihkonen, Sami; Sopanen, Markku; Sillanpää, Mika

2013 in SEPARATION AND PURIFICATION TECHNOLOGY (Elsevier Science B.V.)

ISSN: 1383-5866

Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

Riuttanen, Lauri; Kivisaari, Pyry; Mäntyoja, Nikolai; Oksanen, Jani; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku

2013 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Strain-compensated GaPN/GaP heterostructure on (0?0?1) silicon substrates for intermediate band solar cells

Subramaniyam, Nagarajan; Jussila, Henri; Lemettinen, Jori; Banerjee, Kaustuv; Sopanen, Markku; Lipsanen, Harri

2013 in Journal of Physics D: Applied Physics (IOP PUBLISHING LTD)

ISSN: 0022-3727

Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

Subramaniyam, Nagarajan; Svensk, Olli; Ali, Muhammad; Naresh-Kumar, Gunasekar; Trager-Cowan, Carol; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri

2013 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Analysis of dislocations generated during metal-organic vapor phase epitaxy of GaN on patterned templates

Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T.; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.

2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Analysis of Dislocations Generated during MetalOrganic Vapor Phase Epitaxy of GaN on Patterned Templates

Suihkonen, Sami; Ali, Muhammad; Törmä, Pekka T; Sintonen, Sakari; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, Vladimir N.; Bert, Nikolay A.

2013 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Fabrication of GaN Structures with Embedded Network of Voids Using Pillar Patterned GaN Templates

Svensk, Olli; Ali, Muhammad; Riuttanen, Lauri; Törmä, Pekka; Sintonen, Sakari; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri

2013 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Nevedomsky, V.N.; Bert, N.A.; Odnoblyudov, M.A.; Bougrov, V.E.

2012 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

Ali, Muhammad; Riuttanen, Lauri; Kruse, M; Suihkonen, Sami; Romanov, A.E.; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.

2012 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

ISSN: 0268-1242

High Quality GaAs Nanowires Grown on Glass Substrates

Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri

2012 in NANO LETTERS (AMER CHEMICAL SOC)

ISSN: 1530-6984

Growth and characterization of GaP layers on silicon substrates by metal-organic vapour phase epitaxy

Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Riikonen, Juha; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Jussila, Henri; Subramaniyam, Nagarajan; Huhtio, Teppo; Lipsanen, Harri; Tuomi, Turkka; Sopanen, Markku

2012 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Jussila, Henri; Mattila, Päivi; Oksanen, J.; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku

2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Effect of GaN cap thickness on carrier dynamics in InGaN quantum wells

Kopylov, O.; Shirazi, R.; Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Sopanen, Markku; Kardynal, Beata

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Mattila, Päivi; Bosund, Markus; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku

2012 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Low energy electron beam induced damage on gallium nitride based materials

Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Sopanen, Markku

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Ga-vacancy activation under low energy electron irradiation in GaN-based materials

Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukaz; Sopanen, Markku; Tuomisto, Filip

2012 in MRS Online Proceedings (Wiley-VCH Verlag)

ISSN: 1946-4274

Low energy electron beam induced vacancy activation in GaN

Nykänen, Henri; Suihkonen, Sami; Kilanski, Lukasz; Sopanen, Markku; Tuomisto, Filip

2012 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN

Sintonen, Sakari; Ali, Muhammad; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, Carsten; Tuomi, Turkka O.; Zajac, Marcin

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Characterization of InGaAs/GaNAs strain-compensated quantum dot solar cells

Subramaniyam, Nagarajan; Ali, M.; Jussila, Henri; Mattila, Päivi; Aierken, Abuduwayiti; Sopanen, Markku; Lipsanen, Harri

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations,

Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O.; Shirazi, R.; Lipsanen, Harri; Sopanen, Markku; Kardynal, Beata

2012 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Ali, Muhammad; Romanov, A.E.; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka T.; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, M.A.; Bougrov, V.E.

2011 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Khalil, Hagir; Sun, Yun; Balkan, Naci; Amann, Andreas; Sopanen, Markku

2011 in NANOSCALE RESEARCH LETTERS (Springer New York)

ISSN: 1931-7573

A single-pixel wireless contact lens display

Lingley, A.R.; Ali, M.; Liao, Y.; Mirjalili, R.; Klonner, M.; Sopanen, M.; Suihkonen, S.; Shen, T.; Otis, B.P.; Lipsanen, H.; Parviz, B.A.

2011 in JOURNAL OF MICROMECHANICS AND MICROENGINEERING (IOP PUBLISHING LTD)

ISSN: 0960-1317

Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer

Nagarajan, S.; Aierken, A.; Jussila, H.; Banerjee, K.; Sopanen, M.; Lipsanen, H.

2011 in SEMICONDUCTOR SCIENCE AND TECHNOLOGY (IOP Publishing Ltd.)

ISSN: 0268-1242

Low energy electron beam induced damage on InGaN/GaN quantum well structure

Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Quillet, Emilie; Homeyer, Estelle; Bellessa, Joel; Sopanen, Markku

2011 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

X-ray diffraction study of GaN grown on patterned substrates

Sintonen, Sakari; Ali, Muhammad; Törmä, Pekka T.; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Sopanen, Markku; Lipsanen, Harri; Paulmann, C.; Tuomi, Turkka

2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode

Subramaniyam, Nagarajan; Sopanen, Markku; Lipsanen, Harri; Hong, Chang-Hee; Suh, Eun-Kyung

2011 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Patterning of sapphire / GaN substrates

Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.; Nevedomsky, V.; Bert, N

2011 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Bosund, M.; Mattila, P.; Aierken, A.; Hakkarainen, T.; Koskenvaara, H.; Sopanen, M.; Airaksinen, V.M.

2010 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Forward Bias Capacitance-Voltage Measurements on Semiconductors Using Co-Planar Ohmic and Schottky Contacts in a Cylindrical Geometry

Rangel-Kuoppa, V.T.; Sopanen, M.; Lipsanen, H.

2010 in JOURNAL OF NANO RESEARCH (Trans Tech Publications)

ISSN: 1662-5250

Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements

Sintonen, Sakari; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka Tuomas; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri

2010 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

GaAs nanowire and crystallite growth on amorphous substrate from metalorganic precursors

Statkute, Gintare; Nasibulin, Albert G.; Sopanen, Markku; Hakkarainen, Teppo; Kauppinen, Esko; Lipsanen, Harri

2010 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Defect studies with positrons: what could we learn on III-nitride heterostructures?

Tuomisto, Filip; Mäki, Jussi-Matti; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku

2010 in Journal of Physics: Conference Series (IOP Publishing Ltd.)

ISSN: 1742-6588

InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

Törmä, Pekka; Ali, Muhammad; Svensk, Olli; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Mulot, Mikael; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.

2010 in CRYSTENGCOMM (ROYAL SOC CHEMISTRY)

Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

Ali, Muhammad; Svensk, Olli; Zhen, Zhu; Suihkonen, Sami; Törmä, Pekka; Lipsanen, Harri; Sopanen, Markku; Hjort, K.; Jensen, J.

2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)

ISSN: 0921-4526

Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri

2009 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Cascaded exciton emission of an individual strain-induced quantum dot

Schülein, F.J.R.; Laucht, A.; Riikonen, J.; Mattila, M.; Sopanen, M.; Lipsanen, H.; Finley, J.J.; Wixforth, A.; Krenner, H.J.

2009 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Maskless roughening of sapphire substrates for enhanced light extraction of nitride based blue LEDs

Törmä, Pekka; Svensk, Olli; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.

2009 in SOLID-STATE ELECTRONICS (Elsevier Limited)

ISSN: 0038-1101

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Törmä, Pekka T.; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Kostamo, Pasi; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav E.

2009 in PHYSICA B: CONDENSED MATTER (Elsevier Science B.V.)

ISSN: 0921-4526

InAs island-to-ring transformation by a partial capping layer

Aierken, A.; Hakkarainen, Teppo; Riikonen, J.; Sopanen, M.

2008 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy

Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Lipsanen, Harri

2008 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

ISSN: 0169-4332

Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy

Aierken, Abuduwayiti; Hakkarainen, Teppo; Riikonen, Juha; Sopanen, Markku

2008 in NANOTECHNOLOGY (IOP PUBLISHING LTD)

ISSN: 0957-4484

Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures

Ali, Muhammad; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim A.; Bougrov, Vladislav

2008 in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS (Wiley-VCH Verlag)

ISSN: 1862-6351

Carrier dynamics in strain induced quantum dots modeled by rate equations and Gaussian excitation beam distribution

Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2008 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Odnoblyudo, M.A.; Bougrov, Vladislav

2008 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Ali, Muhammad; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav

2008 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Törmä, Pekka; Svensk, Olli; Ali, Muhammad; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav

2008 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As-P exhange

Aierken, Abuduwayiti; Riikonen, Juha; Mattila, Marco; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2007 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)

Aierken, Abuduwayiti; Hakkarainen, Teppo; Tiilikainen, Jouni; Mattila, Marco; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri

2007 in Journal of crystal growth (Elsevier)

Reduction of threading dislocation density in A1_(0.12)Ga_(0.88)N epilayers by a multistep technique

Lang, Teemu; Odnoblydov, Maxim; Bougrov, Vladislav; Suihkonen, Sami; Svensk, Olli; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri

2007 in Journal of crystal growth (Elsevier)

Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique

Lang, T.; Odnoblyudov, M. A.; Bougrov, V. E.; Suihkonen, S.; Svensk, O.; Törmä, P. T.; Sopanen, M.; Lipsanen, H.

2007 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Tensile-strained GaAsN quantum dots on InP

Pohjola, P.; Hakkarainen, T.; Koskenvaara, Hannu; Sopanen, M.; Lipsanen, H.; Sainio, J.

2007 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Comparison of H2 and N2 as carrier gas in MOVPE growth of InGaAsN quantum wells

Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2007 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures

Reentilä, O.; Mattila, M.; Sopanen, Markku; Lipsanen, H.

2007 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Suihkonen, Sami; Lang, Teemu; Svensk, Olli; Sormunen, Jaakko; Törmä, Pekka; Sopanen, Markku; Lipsanen, Harri; Odnoblyudov, Maxim; Bougrov, Vladislav

2007 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Inhibition of negative differential resistance in modulation-doped n-type GaxIn1-xNyAs1-y/GaAs quantum wells

Sun, Y.; Vaughan, M.P.; Agarwal, A.; Yilmaz, M.; Ulug, B.; Ulug, A.; Balkan, N.; Sopanen, Markku; Reentilä, O.; Mattila, M.; Fontaine, C.; Arnoult, A.

2007 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

Effect of growth conditions on electrical properties of Mg-doped p-GaN

Svensk, Olli; Suihkonen, Sami; Lang, Teemu; Lipsanen, Harri; Sopanen, Markku; Odnoblyudov, Maxim; Bougrov, Vladislav

2007 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Comparison of epitaxial thin layer GaN and InP passivations on InGaAs near-surface quantum wells

Aierken, Abuduwayiti; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri

2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Experimental investigation towards a periodically pumped single-photon source

Bödefeld, C.; Ebbecke, J.; Toivonen, J.; Sopanen, M.; Lipsanen, H.; Wixforth, A.

2006 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Carrier dynamics in strain-induced InGaAsP/InP quantum dots

Koskenvaara, Hannu; Riikonen, Juha; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri

2006 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)

ISSN: 1386-9477

Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique

Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri

2006 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers

Lang, Teemu; Odnoblyudov, M.; Bougrov, V.; Romanov, A.E.; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri

2006 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Metal contacts on InN Proposal for Schottky contact

Rangel-Kuoppa, V.T.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

2006 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Nitrogen content of GaAsN quantum wells by in-situ monitoring during MOVPE growth

Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2006 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

In-situ determination of nitrogen content in InGaAsN quantum wells

Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2006 in JOURNAL OF APPLIED PHYSICS (AIP Publishing)

ISSN: 0021-8979

Simultaneous determinationof indium and nitrogen contents of InGaAsN quantum wells by optical in-situ monitoring

Reentilä, outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2006 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots

Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Aierken, Abuduwayiti; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2006 in NANOTECHNOLOGY (IOP PUBLISHING LTD)

Growth of InN by vertical flow MOVPE

Suihkonen, S.; Sormunen, J.; Rangel-Kuoppa, V.T.; Koskenvaara, H.; Sopanen, Markku

2006 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

MOCVD growth of GaN islands by multistep nucleation layer technique

Lang, Teemu; Odnoblydov, M.; Bourgrov, V.; Sopanen, Markku

2005 in Journal of crystal growth (Elsevier)

Synchrotron x-ray topographic study of dislocations and stacking faults in InAs

Lankinen, Aapo; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Lipsanen, Harri; Sopanen, Markku; Danilewsky, A.; McNally, J.; "O'Reilly", L.; Zhilyaev, Y.; Fedorov, L.; Sipilä, H.; Vaijärvi, S.; Simon, R.; Lumb, D.; Owens, A.

2005 in Journal of crystal growth (Elsevier)

Highly Tunable Emission from Strain-Induced InGasp/InP Quantum Dots

Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

InGaAs/InP quantum dots induced by self-organized InAs stressors-islands

Riikonen, Juha; Sormunen, Jaakko; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

Evolution of Self-Assembled InAs/InP Islands into Quantum Rings

Sormunen, Jaakko; Riikonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2005 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

Transformation of Self-Assembled InAs/InP Quantum Dots into Quantum Rings without Capping

Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri

2005 in NANO LETTERS (AMER CHEMICAL SOC)

Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAS(P)/InP

Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2005 in NANOTECHNOLOGY (IOP PUBLISHING LTD)

Structural and optical properties of GaInNAs/GaAs quantum structures

Hakkarainen, Teppo; Toivonen, Juha; Koskenvaara, Hannu; Sopanen, Markku; Lipsanen, Harri

2004 in JOURNAL OF PHYSICS: CONDENSED MATTER (IOP PUBLISHING LTD)

Self assembled In(Ga)As islands on Ge substrate

Knuuttila, Lauri; Korkala, T.; Sopanen, Markku; Lipsanen, Harri

2004 in Journal of crystal growth (Elsevier)

The morphology of an InP wettig layer on GaAs

Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2004 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

Passivation of GaAS surface by ultrathin epitaxial GaN layer

Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2004 in Journal of crystal growth (Elsevier)

GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

Sormunen, Jaakko; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri

2004 in Journal of crystal growth (Elsevier)

Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source

Sormunen, Jaakko; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri

2004 in APPLIED SURFACE SCIENCE (Elsevier Science B.V.)

Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs

Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri

2003 in Journal of crystal growth (Elsevier)

In(Ga)As quantum dots on Ge substrate

Knuuttila, Lauri; Kainu, Kalle; Sopanen, Markku; Lipsanen, Harri

2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)

Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

Koskenvaara, Hannu; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)

Growth of GaAs on polycrystalline silicon-on-insulator

Riikonen, Juha; Säynätjoki, Antti; Sopanen, Markku; Lipsanen, Harri; Ahopelto, Jouni

2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)

Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells

Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2003 in IEE Proceedings-Optoelectronics (Springer New York)

Observation of defect complexes containing Ga vacancies in GaAsN

Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; Oila, Juha; Saarinen, K.

2003 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Misfit dislocations in GaAsN/GaAs interface

Toivonen, Juha; Tuomi, Turkka; Riikonen, Juha; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri; McNally, P.J; Chen, W.; Lowney, D.

2003 in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS (Springer New York)

GaInNAs quantum well structures for 1.55 µm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri

2002 in Journal of crystal growth (Elsevier)

Pumping of quantum dots with surface acoustic waves

Bödefeld, C.; Wixfoth, A.; Toivonen, J.; Sopanen, M.; Lipsanen, H.

2001 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 µm

Hakkarainen, Teppo; Toivonen, Juha; Sopanen, Markku; Lipsanen, Harri

2001 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

Longitudinal Stark effect in parabolic quantum dots

Rinaldi, Ross; DeGiorgi, Milena; DeVittorio, Massimo; Melcarne, Angelo; Visconti, Paolo; Cingolani, Roberto; Lipsanen, Harri; Sopanen, Markku; Drufva, T.; Tulkki, Jukka

2001 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Influence of Coulomb and exchange interation on quantum dot magnetoluminescence up to B=45T

Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.

2000 in Physica Status Solidi A (Japan Society of Applied Physics)

Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45 T)

Cingolani, R.; De Giorgi, M.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.

2000 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)

ISSN: 1386-9477

Influence on coulomb and exhange interaction on quantum dot magnetoluminescence up to 45 t.

Congolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.

2000 in Physics Status Solidi A. (Elsevier)

Carrier capture processes in strain-induced InxGa1−xAs/GaAs quantum dot structures

Lingk, C.; Helfer, W.; von Plessen, G.; Feldmann, J.; Stock, K.; Feise, W.M.; Citrin, D.S.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Tulkki, J.; Ahopelto, J.

2000 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs

Sopanen, M.; Xin, H.P.; Tu, C.W.

2000 in APPLIED PHYSICS LETTERS (AMER INST PHYSICS)

High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.

2000 in Journal of crystal growth (Elsevier)

Trailoring of energy levels in strain-induced quantum dots

Ahopelto, J.; Lipsanen, H.; Sopanen, M.

1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

Tailoring of energy levels in strain-induced quantum dots

Ahopelto, Jouni; Sopanen, Markku; Lipsanen, Harri

1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Influence of Coulomb and Exchange Interaction on Quantum Dot Magnetoluninescence up to B = 45 T

Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Uchida, K.; Miura, N.; Arakawa, Y.

1999 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Electron-hole correlation in quantum dots under a high magnetic field (up to 45T)

Cingolani, R.; Rinaldi, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, Jukka; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.

1999 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)

ISSN: 0031-9007

Growth and optical properties of strain-induced quantum dots

Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.; Braskén, M.; Lindberg, M.

1999 in PHYSICA SCRIPTA (IOP Publishing Ltd.)

ISSN: 0031-8949

Effect of InP passivation on carrier recombination in InGaAs/GaAs surface quantum wells

Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandman, J.; Feldmann, J.

1999 in JAPANESE JOURNAL OF APPLIED PHYSICS (Japan Society of Applied Physics)

ISSN: 0021-4922

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1999 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1999 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Temperature dependence of carrier relaxation in strain-induced quantum dots

Brasken, M.; Lindberg, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.

1998 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Magneto-optical properties of strain-induced InxGa1−xAs parabolic quantum dots

Rinaldi, R.; Mangino, R.; Cingolani, R.; Lipsanen, H.; Sopanen, Markku; Tulkki, J.; Brasken, M.; Ahopelto, J.

1998 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Strain-induced quantum dot superlattice

Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.

1998 in PHYSICA E: LOW: DIMENSIONAL SYSTEMS AND NANOSTRUCTURES (Elsevier)

ISSN: 1386-9477

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriguez, E.; Höfling, E.; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.

1997 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Strain-Induced Quantum Dots: Fabrication and Optical Properties

Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.; Grosse, S.; Won Plessen, G.; Feldmann, J.; Hayes, G.; Philips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.

1997 in Superlattices, Microstructures and Microdevices (AMERICAN INSTITUTE OF PHYSICS)

Carrier relaxation dynamics in quantum dots: scattering mechanisms and state-filling effects

Grosse, S.; Sandman, J.; von Plessen, G.; Feldman, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1997 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Optical characterisation of self organised InGaAs/InP heterodots

Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Sotomayor Torres, C.M.; Gontijo, I.; Buller, G.S.

1997 in Institute of Physics Conference Series (AMER PHYSICAL SOC)

Carrier relaxation in strain-induced (GaIn)As quantum dots

Sandman, J.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1997 in PHYSICA STATUS SOLIDI A: APPLICATIONS AND MATERIALS SCIENCE (WILEY-V C H VERLAG GMBH)

ISSN: 1862-6300

Ultrafast relaxation dynamics in strain-induced quantum dots

Sandman, J.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1997 in PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS (Akademie Verlag GMBH)

ISSN: 0370-1972

Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxy

Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.

1997 in Surface Science (Elsevier)

ISSN: 0039-6028

Self-Organized InAs Islands on (100) InP by Metalorganic Vapor-Phase Epitaxcy

Taskinen, M.; Sopanen, M.; Lipsanen, H.; Tulkki, J.; Tuomi, T.; Ahopelto, J.

1997 in Surface Science (Elsevier)

Metalorganic vapor phase epitaxial growth of A1GaSb and A1GaAsSb using all-organometallic sources

Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.

1996 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Enhanced optical properties of in situ passivated near-surface AlxGa1-xAs/GaAs quantum wells

Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.

1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1996 in SOLID-STATE ELECTRONICS (Elsevier Limited)

ISSN: 0038-1101

Zeeman effect in parabolic quantum dots

Rinaldi, R.; Guigno, P.; Cingolani, R.; Lipsanen, Harri; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1996 in PHYSICAL REVIEW LETTERS (AMERICAN PHYSICAL SOC)

ISSN: 0031-9007

Red luminescence from strain-induced GaInP quantum dots

Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.

1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Fabrication of InGaAs quantum disks using self-organized InP islands as a mask in wet chemical etching

Sopanen, M.; Lipsanen, H.; Ahopelto, J.

1996 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Luminescence from excited states in strain-induced In_(x)Ga_(1-x)As quantum dots

Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1995 in PHYSICAL REVIEW B (AMER PHYSICAL SOC)

ISSN: 1098-0121

Recombination processes in strain-induced InGaAs quantum dots

Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1995 in NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D: CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS (Editrice Compositori s.r.l.)

ISSN: 0392-6737

Growth of high-quality GaSb by metalorganic vapor phase epitaxy.

Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.

1995 in JOURNAL OF ELECTRONIC MATERIALS (SPRINGER)

ISSN: 0361-5235

Strain-induced quantum dots by self-organized stressors

Sopanen, M.; Lipsanen, H.; Ahopelto, J.

1995 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy.

Sopanen, M.; Lipsanen, H.; Ahopelto, J.

1995 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Fabrication of Nanostructures using MBE and MOVPE

Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.; Tuomi, T.; Airaksinen, V.M.; Sinkkonen, J.; Siren, E.

1994 in PHYSICA SCRIPTA (IOP Publishing Ltd.)

ISSN: 0031-8949

Selective growth of InGaAs on nanoscale InP islands

Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.; Niemi, H.

1994 in APPLIED PHYSICS LETTERS (AMERICAN INSTITUTE OF PHYSICS)

ISSN: 0003-6951

Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

Lipsanen, H.; Ahopelto, J.; Koljonen, T.; Sopanen, M.

1994 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Photoluminescene of buried InGaAs grown on nanoscale InP islands by MOVPE

Lipsanen, H.; Ahopelto, J.; Koljonen, T.; Sopanen, M.

1994 in Journal of crystal growth (Elsevier)

Growth of GaInAsSb using tertiarybutylarsine as arsenic source

Sopanen, M.; Koljonen, T.; Lipsanen, H.; Tuomi, T.

1994 in Journal of crystal growth (Elsevier)

ISSN: 0022-0248

Book section, Chapters in research books

Massakurssien yhteiset ongelmat

Alestalo, Pekka; Belitz, Sanna; Sopanen, Markku; Tuhkuri, Jukka; Virtanen, Satu

2003

Formation of excess donors during high-dose 74Ge+ Ion implantation

Tuomi, T.; Xia, Z.; Ristolainen, E.; Elliman, R.; Ronkainen, H.; Eranen, S.; Kuivalainen, P.; Sopanen, M.; Holloway, P.

1995

Conference proceedings

Study Of 1/f Noise Characteristics In Cu/n-GaN Schottky Barrier Diode

Garg, Manjari; Kumar, Ashutosh; Subramaniyam, Nagarajan; Sopanen, M.; Singh, R.

2016 in AIP Conference Proceedings (AMER INST PHYSICS)

ISBN: 978-0-7354-1378-8

ISSN: 0094-243X

Growth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars

Subramaniyam, Nagarajan; Svensk, Olli; Amit, P.; Shah, Ali; Rahman, Azizur; Maliakkal, Carina B.; Bhattacharya, Arnab; Lipsanen, Harri; Sopanen, Markku

2014

Structural study of crystal defects in thin GaP layers on (100) silicon substrates by X-ray diffraction

Jussila, Henri; Subramaniyam, Nagarajan; Sintonen, Sakari; Huhtio, Teppo; Tuomi, Turkka O.; Lipsanen, Harri; Sopanen, Markku

2012

Defect activation in MOVPE GaN under low energy electron beam irradiation

Nykänen, Henri; Suihkonen, Sami; Kilanski, Lucasz; Sopanen, Markku; Tuomisto, Filip

2012

Growth and Characterization of GaP Layers on Silicon Substrates by MOVPE

Jussila, Henri; Subramaniyam, Nagarajan; Mattila, Päivi; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri

2011

Characteristics of InGaAs/GaAsN quantum dot solar cells.

Nagarajan, S.; Ali, M.; Mattila, P.; Jussila, H.; Aierken, A.; Sopanen, M; Lipsanen, H.

2011

Low Energy Electron Beam Induced Damage on Gallium Nitride Based Structures

Nykänen, Henri; Mattila, Päivi; Suihkonen, Sami; Riikonen, Juha; Homeyer, Estelle; Bellessa, Joel; Sopanen, Markku

2011

Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content

Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri

2011 in AIP Conference Proceedings (AMER INST PHYSICS)

ISSN: 0094-243X

Temperature Dependence of Current-Voltage Characteristics of Au/Ga0.51In0.49P Schottky Barrier Diodes

Rangel-Kuoppa, Victor-Tapio; Knuutila, Lauri; Sopanen, Markku; Lipsanen, Harri; Avila, Alejandro

2011 in AIP Conference Proceedings (AIP)

ISSN: 0094-243X

Synchrotron Radiation X-Ray Topography and X-Ray Diffraction Investigation of Low Dislocation Density GaN

Sintonen, Sakari; Suihkonen, Sami; Kostamo, Pasi; Svensk, Olli; Ali, Muhammad; Sopanen, Markku; Lipsanen, Harri; Tuomi, Turkka; Paulmann, Carsten

2011

MOCVD Growth and Characterization of Near-Surface InGaN/GaN Single Quantum Wells for Non-Radiative Coupling of Optical Exictations

Svensk, Olli; Suihkonen, Sami; Sintonen, Sakari; Kopylov, O; Shirazi, R; Lipsanen, Harri; Sopanen, Markku; Kardynal, B E

2011

Self-assembled InGaAs/GaAs quantum rings: Correlation of formation temperature and energy spectrum

Komkov, O.S.; Gordyushenkov, O.E.; Pikhtin, A.N.; Aierken, A.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.

2010

Growth and characterization of InAsN/InAs multi quantum well for infrared device applications

Subramaniyam, Nagarajan; Mattila, Päivi; Aierken, Abuduwayiti; Jussila, Henri; Sopanen, Markku; Lipsanen, Harri

2010

Recent progress towards acoustically mediated carrier injection into individual nanostructures for single photon generation

Völk, Stefan; Schülein, Florian J.R.; Knall, Florian; Wixforth, Achim; Krenner, Hubert J.; Laucht, Arne; Finley, Jonathan J.; Riikonen, Juha; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri; He, Jun; Truong, Tuan A.; Kim, Hyouchul; Petroff, Pierre M.

2010 in Proceedings of SPIE (SPIE)

ISBN: 978-0-8194-8006-4

ISSN: 0277-786X

Temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Rangel-Kuoppa, Victor-Tapio; Suihkonen, Sami; Sopanen, Markku; Lipsanen, Harri

2009 in AIP Conference Proceedings (AIP)

ISBN: 9780735407367

ISSN: 0094-243X

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

Mattila, M.; Sopanen, M.; Lipsanen, H.

2005 in AIP Conference Proceedings (AIP)

ISBN: 0735402574

ISSN: 0094-243X

Growth parameter optimization for high nitrogen content Ga(In)NAs by MOVPE

Mattila, Marco; Sormunen, Jaakko; Sopanen, Markku; Lipsanen, Harri

2004

Ga(In)NAs growth parameter optimization with low-pressure and atmospheric-pressure MOVPE systems

Reentilä, Outi; Mattila, Marco; Toivonen, Juha; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2004

Applications of thin GaN layers in GaAs heterostuctures grown using DMHy

Sormunen, Jaakko; Riikonen, Juha; Koskenvaara, Hannu; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2004

Misfit dislocations in GaAsN-GaAs interface

Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Chen, W.; Lowney, D.

2002

Transient processes on strain-induced quantum dots in high magnetic field.

Lomascolo, M.; Pomarico, A.; Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.

2001 in SPRINGER PROCEEDINGS IN PHYSICS (SPRINGER VERLAG)

ISBN: 3-540-41778-8

ISSN: 0930-8989

Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs

Sopanen, M.; Xin, H.P.; Tu, C.W.

2000

High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy

Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.

2000

Experimental determination of intra-lever relaxation time in quantum dots with different energy level spacing

Koskenvaara, H.; Sopanen, M.; Tulkki, J.; Lipsanen, H.; Braskén, M.; Lindberg, M.

1999

Carrier relaxation in self-organized quantum dots: the effect of doping

Lipsanen, H.; Koskenvaara, H.; Toivonen, J.; Sopanen, M.; Ahopelto, J.

1999

ISBN: 1-56677-245-1

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Grosse, S.; Feldman, J.; Karrai, K.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1999

Effects of electron-hole correlation in quantum dots under high magnetic field (up to 45T)

Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Virkkala, R.; Maijala, K.; Tulkki, J.; Braskén, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.

1999

Self-assembled GaInNAs quantum dots for 1.3 and 1.55 µm emission on GaAs

Sopanen, M.; Xin, H.P.; Tu, C.W.

1999

Tuning of energy levels in strain-induced quantum dots

Ahopelto, J.; Sopanen, M.; Lipsanen, H.

1998

The role of stressor size fluctuation in photoluminescence of strain-induced quantum dots

Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Tulkki, Jukka

1998 in INSTITUTE OF PHYSICS CONFERENCE SERIES (IOP PUBLISHING LTD)

ISBN: 0-7503-0611-4

ISSN: 0951-3248

Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells

Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.

1998 in IEEE CONFERENCE PROCEEDINGS (IEEE)

ISBN: 0-7803-4220-8

ISSN: 1092-8669

Photoluminescence study of passivated surface quantum wells

Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.

1998

High magnetic field effects on the optical properties of InGaAs parabolic quantum dots

Rinaldi, R.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Brasken, M.; Ahopelto, J.; Uchida, K.; Miura, N.; Arakawa, Y.

1998

THz-Near Infrared upconversion in strain-induced quantum dots

Yusa, G.; Allen, J.; Sakaki, H.; Kono, J.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.

1998

Terahertz(THz)-Near Infrated(NIR) Upconversion in strain-induced quantum dots

Yusa, G.; Allen, S.J.; Sakaki, H.; Kono, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.

1998

Strain-induced quantum dots: fabrication and optical properties

Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Taskinen, M.; Tulkki, J.; Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillips, R.; Rinaldi, R.; Giugno, P.V.; Cingolani, R.

1997

Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Ahopelto, J.; Sopanen, M.; Lipsanen, H.; Lourdudoss, S.; Rodriquez, E.; Messmer, Höfling; Reithmaier, J.P.; Forchel, A.; Petersson, A.; Samuelson, L.

1997

Self-organized growth of InAs islands on (100) Si by metalorganic vapor phase epitaxy

Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1997

Strain-induced quantum dot superlattice

Sopanen, M.; Lipsanen, H.; Tulkki, J.; Ahopelto, J.

1997

Untersuchung der Relaxationsdynamik optisch generierter Ladungsträger in verspannungsinduzierten InGaAs Quantenpunkten

Grosse, S.; Sandmann, J.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1996

Optical characterization of self-organized InGaAs/GaAs heterodots

Guasch, C.; Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.

1996

Optical characterisation of self organised InGaAs/InP heterodots

Guasch, C.; Ahopelto, J.; Lipsanen, Harri; Sopanen, M.; Tang, Y.; Sotomayor Torres, C.

1996

Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.

1996

ISBN: 0-7803-3283-0

Carrier Relaxation and Recombination Dynamics in InGaAs/GaAs Quantum Dots

Sandmann, J.; Grosse, S.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1996

Mesoscopic and Atomic Zeeman Effects in Quantum Well Dots Induced by Coherent InP Islands

Tulkki, J.; Lipsanen, H.; Sopanen, M.; Brasken, M.; Lindberg, M.; Ahopelto, J.; Rinaldi, R.; Giugno, P.; Cingolani, R.

1996

Optical properties of self-organized InGaAs/InP dots

Ahopelto, J.; Lipsanen, H.; Sopanen, M.

1995

ISBN: 0-7803-2147-2

Self-organizing growth of InGaAs on nanoscale InP islands

Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Koljonen, T.

1994

Self-organising growth of nanoscale heterostructures: Selective growth of InGaAs on InP dots

Ahopelto, J.; Lipsanen, H.; Sopanen, M.; Niemi, H.E.-M.

1994

Formation of excess donors during (74)Ge(+) ion implantation

Xia, Z.; Ristolainen, Eränen; Ronkainen, H.; Suni, J.; Elliman, R.; Sopanen, M.; Holloway, P.

1994

Praseodymium dioxide doping of In_1-xGa_xAs_yP_1-y epilayer grown with liquid phase epitaxy

Hjelt, Kari T.; Sopanen, Markku A.; Lipsanen, Harri K.; Tuomi, Turkka O.; Hasenohrl, Stanisla

1993 in MRS Proceedings (Materials Research Society MRS)

ISBN: 1558991972

ISSN: 0272-9172

Optical and electronic properties of praseodymium dioxide doped In_(1-x)Ga_(x)As_(y)P_(1-y) layers grown with liquid phase epitaxy

Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.

1993

Liquid phase epitaxial growth of GaSb layers from Ga- and Sn-rich melts

Koljonen, T.; Sopanen, M.; Hjelt, K.; Lipsanen, H.; Tuomi, T.

1993

Photoluminescence of GaSb wafers and LPE grown layers

Sopanen, M.; Hjelt, K.; Koljonen, T.; Lipsanen, H.; Koponen, M.; Tuomi, T.

1993

Non-refereed scientific articles

Unrefereed journal articles

Substrate-patterning techniques for nitride growth

Suihkonen, Sami; Ali, Muhammad; Svensk, Olli; Sintonen, Sakari; Sopanen, Markku; Lipsanen, Harri; Törmä, Pekka T.

2010 in SPIE Newsroom, Displays and Illumination (The Finnish Physical Society)

Unrefereed conference proceedings

Growth and characterization of III-nitride nanostructures

Subramaniyam, Nagarajan; Sopanen, Markku

2014

Enhanced 1.3 µm luminescence from InGaAs/GaAs quantum dots with GaAsN strain compensating layer

Aierken, A.; Nagarajan, S.; Huhtio, T.; Sopanen, M.; Lipsanen, H.

2011

Publications intended for professional communities

Article in professional journal

Valotehoa ledeistä, Pintaplasmoneilla kohti tehokkaampaa optoelektroniikkaa,

Mattila, P.; Nykänen, H.; Sopanen, M.; Suihkonen, S.; Svensk, O.

2011 in Prosessori (The Finnish Physical Society)

ISSN: 0357-4121

Optical properties of quantum dots induced by self-assembled stressors, in Optics of Quantum Dots and Wires

Tulkki, J.; Lipsanen, H.; Sopanen, M.

2004 in Artec House (The Finnish Physical Society)

Article in professional conference proceedings

Properties of GaAs nanowires grown on low-cost glass substrates

Dhaka, Veer; Haggren, Tuomas; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri

2012

Remarkable shell-Induced redshift with GaAs/AlGaAs nanowires

Haggren, Tuomas; Dhaka, Veer; Jussila, Henri; Jiang, Hua; Kauppinen, Esko; Huhtio, Teppo; Sopanen, Markku; Lipsanen, Harri

2012

Published development or research report

In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases

Reentilä, Outi; Mattila, Marco; Knuuttila, Lauri; Hakkarainen, Teppo; Sopanen, Markku; Lipsanen, Harri

2006

In-situ composition determination of MOVPE grown InGaAsN quantum wells

Reentilä, Outi; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2006

Effect of growth conditions on electrocal properties of Mg-doped p-GaN

Svensk, Olli; Törmä, Pekka; Suihkonen, Sami; Sopanen, Markku; Odnoblyudov, M.A.; Bougrov, V.E.

2006

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

2005

YOOPpia ikä kaikki

Alestalo, Pekka; Belitz, Sanna; Sopanen, Markku; Tuhkuri, Jukka; Virtanen, Satu

2003

Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.

2002

Wavelength extension of GaIn(N)As quantum dot structures grown on GaAs

Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.

2002

In (Ga)As quantum dots on Ge substrate

Knuuttila, L.; Kainu, K.; Sopanen, M.; Lipsanen, H.

2002

Photoluminescence study of strain induced GaInNAs/GaAs quantum dots

Koskenvaara, H.; Hakkarainen, T.; Lipsanen, H.; Sopanen, M.

2002

Vacancy-type defects in GaAsN grown by metal-organic vapor phase epitaxy

Toivonen, J.; Oila, J.; Saarinen, K.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.

2002

Effect of growth conditions on the defect transitions in Ga(In)NAs

Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.

2002

Growth and optical properties of GaInNAs quantum wells

Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.

2001

Growth and defects of GaAsN layers on GaAs

Toivonen, J.; Tuomi, T.; Riikonen, J.; Knuuttila, L.; Rantamäki, R.; Sopanen, M.; Lipsanen, H.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.

2001

Defects in GaInNAs quantum dot layers

Tuomi, Turkka; Pohjola, P.; Riikonen, J.; Knuuttila, L.; Sopanen, M.; McNally, P.J.; Kanatharana, J.; Chen, W.; Lowney, D.; Danilewsky, A.N.

2001

High-nitrogen-composition GaNAs by metalorganic vapor phase epitaxy

Toivonen, J.; Hakkarainen, T.; Sopanen, M.; Lipsanen, H.

2000

Photoluminescence decay and upconversion of stressor-induced GaInP quantum dots

Jaaniso, R.; Lipsanen, H.; Reimand, I.; Sopanen, M.

1997

Ultrafast relaxation dynamics in strain-induced quantum dots

Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldman, J.; Hayes, G.; Phillips, R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J.

1997

Relaxation and Recombination Dynamics of Optically Generated Carriers in Strain-Induced InGaAs/GaAs Quantum Dots

Grosse, S.; Sandmann, J.; von Plessen, G.; Feldmann, J.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1996

Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.

1996

In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells

Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J.; Ahopelto, J.

1996

Mesoscopic Zeeman effect in parabolic quantum dots

Rinaldi, R.; Giugno, P.; Cingolani, R.; Lipsanen, H.; Sopanen, M.; Tulkki, J.; Ahopelto, J.

1996

Visible Luminescence from Quantum Dots Induced by Self-Organized Stressors

Sopanen, M.; Taskinen, M.; Lipsanen, H.; Ahopelto, J.

1996

InGaAs quantum dots induced by self-organized InP stressors.

Lipsanen, H.; Ahopelto, J.; Sopanen, M.

1995

Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors.

Lipsanen, H.; Sopanen, M.

1995

Recombination processes in strain-induced InGaAs quantum dots.

Lipsanen, H.; Sandman, J.; Grosse, S.; Feldmann, J.; Gobel, E.O.; Sopanen, M.; Ahopelto, J.

1995

Optical properties of self-organized InGaAs/InP dots.

Lipsanen, H.; Ahopelto, J.; Sopanen, M.

1995

Fabrication, characterization and modelling of stain-induced quantum dots.

Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Heinämäki, A.; Tulkki, J.; Tuomi, T.

1995

Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.

Sopanen, M.; Lipsanen, H.; Ahopelto, J.

1995

Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources

Koljonen, T.; Sopanen, M.; Lipsanen, H.; Tuomi, T.

1994

X-ray diffraction study of GaSb on GaAs grown by MOVPE

Lipsanen, H.; Koljonen, T.; Sopanen, M.; Tuomi, T.

1994

Growth of InGaSb and GaSb on GaSb substrates by atmospheric pressure MOVPE

Sopanen, M.; Koljonen, T.; Lipsanen, H.; Hjelt, K.

1994

MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

Sopanen, M.; Koljonen, T.; Lipsanen, H.

1994

Metallo organic vapour phase epitaxy of III-V semiconductors

Sopanen, M.; Koljonen, T.; Lipsanen, H.; Taskinen, M.; Tuomi, T.

1994

MOVPE growth of GaAs, AlGaAs, InP, InGaAs and InGaAsP using all-organometallic sources

Sopanen, M.; Lipsanen, H.; Koljonen, T.; Ahopelto, J.; Taskinen, M.

1994

Formation of 75As+-related excess donor effect during high-dose 74Ge+Ion implantation

Xia, Z.; Ristolainen, E.; Eränen, S.; Ronkainen, H.; Elliman, R.; Sopanen, M.; Tuomi, T.

1994

The effect of praseodymium doping on the optical properties of LPE-grown InGaAsP layer

Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.; Hasenöhrl, S.

1993

Photoluminescence spectra of GaSb subtrates and layers

Hjelt, K.; Koljonen, T.; Sopanen, M.; Koponen, M.

1993

Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

Hjelt, K.; Sopanen, M.; Lipsanen, H.; Tuomi, T.

1993

Metallo-organic vapor phase system

Lipsanen, H.; Hjelt, K.; Koljonen, T.; Sopanen, M.; Tuomi, T.

1993

Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy

Sopanen, M.; Koljonen, T.; Tuomi, T.

1993

Photoluminescence spectra of InGaAsP doped with praseodymium dioxide PrO2

Hasenöhrl, S.; Hjelt, K.; Lipsanen, H.; Sopanen, M.; Tuomi, T.

1992

Liquid phase epitaxial (LPE) technique

Lipsanen, H.; Sopanen, M.; Hjelt, K.; Koljonen, T.; Prieur, E.; Tuominen, M.; Yli-Juuti, E.; Kokkinen, H.; Tuomi, T.

1992

Fabrication of InGaAsP/InP distributed feedback lasers

Sopanen, M.; Koljonen, T.; Tuomi, T.

1992

Inhomogeneity of LPE-InGaAs layers grown by supercooling technique

Sopanen, M.; Tuomi, T.

1992